年产280吨高纯半导体前驱体及年产500吨MAO（甲基铝氧烷）项目

280T/Y High-purity semiconductor precursors and 500T/Y MAO (Methylaluminoxane) project

 集成电路产业是信息产业的基础与核心，薄膜材料成为半导体集成电路制造过程的关键技术之一。其核心材料前驱体是半导体薄膜沉积工艺的主要原材料，通过化学气相沉积(CVD)或原子气相沉积(ALD)等方式在集成电路晶圆表面形成具有特定电学性质的薄膜。高纯半导体前驱体及MAO (甲基铝氧烷)项目旨在开发半导体集成电路制造用前驱体，形成规模化生产能力，填补国内半导体前驱体的空白，为我国超大规模集成电路产业的蓬勃发展奠定坚实的基础。

Integrated circuit industry is the foundation and core of information industry, and thin film materials become one of the key technologies in semiconductor integrated circuit manufacturing process. Its core material precursor is the main raw material of semiconductor thin film deposition process, which forms thin films with specific electrical properties on the surface of integrated circuit wafers by chemical vapor deposition (CVD) or atomic vapor deposition (ALD). The high-purity semiconductor precursor and MAO (methylaluminoxane) project aims to develop the precursor for semiconductor integrated circuit manufacturing, form large-scale production capacity, fill the gap of domestic semiconductor precursor, and lay a solid foundation for the booming development of China’s ultra-large scale integrated circuit industry.